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1 PublikationData publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
von Borany, J.; Engelmann, Hans-Jürgen; Heinig, K.-H.; Hlawacek, G.; Hübner, R.; Klüpfel, F.; Möller, W.; Pourteau, M.-L.; Rademaker, G.; Rommel, M.; Baier, L.; Pichler, P.; Tiron, R.
Abstract
The data included in the publication are results of SET device simulations, Monte-Carlo simulations of physical processes (ion-beam mixing, phase seepration, Si nanodot formation) and micrographs taken by electron and ion microscopes.
Keywords: CMOS; Single-electron transistor; nanostructure fabrication; self-organization; Silicon nanodot; Nanopillars; Ion-beam mixing; Phase separation
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 34906) publication
- DOI: 10.1088/1361-6641/acbe5d references this (Id 34906) publication
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CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars …
ROBIS: 34842 has used this (Id 34906) publication of HZDR-primary research data
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Forschungsdaten im HZDR-Daten-Repositorium RODARE
Publication date: 2022-07-11 Open access
DOI: 10.14278/rodare.1804
Versions: 10.14278/rodare.1805
License: CC-BY-4.0
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Permalink: https://www.hzdr.de/publications/Publ-34906
