Flash-lamp annealing of semiconductor materials - Applications and process models
Flash-lamp annealing of semiconductor materials - Applications and process models
Mcmahon, R. A.; Smith, M. P.; Seffen, K. A.; Voelskow, M.; Anwand, W.; Skorupa, W.
Abstract
Flash-lamp annealing (FLA) oil a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural Model to compute stresses and deflections The paper shows how these models can be used to explore process conditions in flash lamp annealing; with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.
Keywords: flash lamp; pulse annealing; thermal model; optical model; temperature profiles; stress
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Vacuum 81(2007)10, 1301-1305
DOI: 10.1016/j.vacuum.2007.01.033
Cited 48 times in Scopus -
Beitrag zu Proceedings
VI Int. Conf. Ion Implantation and other Applications of Ions and Electrons, 26.-29.09.2006, Lublin, Poland
Proceedings of the VI Int. Conf. Ion Implantation and other Applications of Ions and Electrons
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