Terahertz emission from a large-area GaInAsN emitter
Terahertz emission from a large-area GaInAsN emitter
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Abstract
A large-area interdigitated terahertz (THz) emitter based on molecular-beam epitaxy grown GaInAsN with an additional AlGaAs heterostructure is investigated as THz source for excitation wavelengths between 1.1 and 1.5 µm. The optical and electrical properties of the emitter material exhibit absorption up to a wavelength of 1.5 µm and have a resistivity of 550 kΩ cm. Terahertz waves were detected by electro-optical sampling with a bandwidth exceeding 2 THz. Best performance is found for excitation wavelengths below 1.35 µm. Furthermore the emission properties for several excitation powers are investigated showing a linear increase of THz emission.
Keywords: TERAHERTZ; SPECTROSCOPY; ANTENNAS; BEAMS
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Applied Physics Letters 93(2008)10, 101102
DOI: 10.1063/1.2978398
Cited 13 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-11663