Room temperature ferromagnetism in carbon-implanted ZnO
Room temperature ferromagnetism in carbon-implanted ZnO
Zhou, S.; Xu, Q.; Potzger, K.; Talut, G.; Fassbender, J.; Vinnichenko, M.; Grenzer, J.; Helm, M.; Hochmuth, H.; Lorenz, M.; Grundmann, M.; Schmidt, H.
Abstract
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
Keywords: ZnO; Diluted magnetic semiconductor; Carbon; ion implantation
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Applied Physics Letters 93(2008), 232507
DOI: 10.1063/1.3048076
Cited 211 times in Scopus -
Vortrag (Konferenzbeitrag)
DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2009, 22.-27.03.2009, Dresden, Germany
Permalink: https://www.hzdr.de/publications/Publ-11875