Cavity layer introduction in SIMOX technology


Cavity layer introduction in SIMOX technology

Ou, X.; Kögler, R.; Mücklich, A.; Skorupa, W.; Möller, W.; Wang, X.

Abstract

The oral conference contribution reports about latest results of the improvement of the SIMOX process for fabrication of silicon-on-insulator (SOI) materials by defect engineering.

Keywords: SOI; SIMOX; ion implantation; defect engineering

  • Lecture (Conference)
    72. Jahrestagung der DPG und DPG Frühjahrstagung des Arbeitskreises Festkörperphysik, 25.-29.02.2008, Berlin, Germany

Permalink: https://www.hzdr.de/publications/Publ-12001