Dose Rate Effects in Focused Ion-Beam Synthesis of Cobalt Disilicide
Dose Rate Effects in Focused Ion-Beam Synthesis of Cobalt Disilicide
Hausmann, S.; Bischoff, L.; Teichert, J.; Voelskow, M.; Grambole, D.; Herrmann, F.; Möller, W.
Abstract
The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 °C, it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-times. This result is explained by an enhanced damage accumulation for longer dwell-times.
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Applied Physics Letters, Volume 72, Number 21, 25 May 1998, pp 2719-2721
DOI: 10.1063/1.121110
Cited 18 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-1201