Homoepitaxial ZnO thin films by PLD: Structural properties

Homoepitaxial ZnO films deposited on annealed hydrothermal O-face ZnO single crystals show superior structural quality. This is demonstrated by narrow ZnO(00.2) rocking curves with FWHM of typically 23 to 35 arcsec, and nearly dislocation-free TEM cross sections. Nominally undoped ZnO films indicate a minor in-plane strain of about 250 ppm and no out-of-plane strain. Target doping by 0.01% P2O5 or 0.5% Li3N results in pseudomorphic film growth without in-plane strain. Increasing doping concentration of 0.1 and 1% P2O5 results in both in-plane and out-of-plane strain up to 0.9 % indicating relaxed films. The O-face polarity of the homoepitaxial ZnO films is confirmed by convergent beam electron diffraction.