Nanocrystals formation in a –Si/SiO2 layer by ion mixing and plasma immersion ion implantation in different energy ranges

Nanocrystals formation in a –Si/SiO2 layer by ion mixing and plasma immersion ion implantation in different energy ranges

Mello, C. B.; Ueda, M.; Beloto, A. F.; Mücklich, A.; Reuther, H.

Abstract

Nanocrystals formation in a –Si/SiO2 layer by ion mixing and plasma immersion ion implantation in different energy ranges

  • Poster
    16th International Conference on Ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Deutschland

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