Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationIon Implantation in AFM Cantilever Array Fabrication
Schmidt, B.; Zier, M.; Potfajova, J.; Philipp, P.
Abstract
Low energy ion implantation has been applied to fabrication of shallow piezoresistive elements for AFM deflection sensing. The corresponding process parameters have been optimized to meet the demands of the electronics (power supply, resistance) connected to the piezoresistors. For the dimension (length x width = 5x20 µm2) of the piezoresistors designed by the University of Ilmenau, the resistance of them is 2.3-2.5 kOhm. The full processing of PRONANO AFM arrays consists additional three ion implantation steps for integrated heater and interconnect fabrication as well as for substrate reverse-biasing.
Keywords: cantilever; array; piezoresistor; ion implantation; shallow pn-junction; sheet resistance
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 14802) publication
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Beitrag zu fremdem Sammelwerk
T. Sulzbach, I. W. Rangelow: PRONANO Proceedings of the Integrated Project on Massively Parallel Intelligent Cantilever Probe Platforms for Nanoscale Analysys and synthesis, Münster: Monsenstein und Vannerdat OHG (MV Wissenschaft), 2010, 978-3-86991-117-9, 111-117
Permalink: https://www.hzdr.de/publications/Publ-14802