Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films
Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films
Shuai, Y.; Zhou, S.; Wu, C.; Zhang, W.; Bürger, D.; Slesazeck, S.; Mikolajick, T.; Helm, M.; Schmidt, H.
Abstract
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ∼4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.
Keywords: resistive switching; BiFeO3; nonvolatile
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Applied Physics Express 4(2011), 095802
DOI: 10.1143/APEX.4.095802
Cited 23 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15951