Superconductor-insulator transition controlled by annealing in Ga implanted Si
Superconductor-insulator transition controlled by annealing in Ga implanted Si
Heera, V.; Fiedler, J.; Voelskow, M.; Mücklich, A.; Skrotzki, R.; Herrmannsdörfer, T.; Skorupa, W.
Abstract
Heavily Ga implanted Si nanolayers covered with a thin SiO2 layer exhibit a superconductor-insulator transition in dependence on annealing conditions. The transition characteristics resemble those of ultrathin quench-condensed metal films although the implanted layer differs clearly in composition, width, and nanostructure. This implies a general physical mechanism for the superconductor-insulator transition in thin, disordered layers which is supposed to be a quantum phase transition between dual states - the superconducting and the superinsulating one. The existence of a critical resistance for the phase transition is confirmed.
Keywords: Ga implantation; Ga doped Si; rapid thermal annealing (RTA); superconductor-insulator transition; Hall effect; critical resistance
Beteiligte Forschungsanlagen
- Hochfeld-Magnetlabor (HLD)
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16933) publication
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Applied Physics Letters 100(2012), 262602
DOI: 10.1063/1.4732081
Cited 12 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-16933