Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

In this work charge trapping and electroluminescence (EL) quenching in rare-earth (RE) implanted SiO2 on Si as a function of injected charge into the dielectric were studied. The blocking of the luminescent REOX nanoclusters from the hot exciting electrons by negative charge trapping in a defect region (shell) located in the vicinity of the REOX nanocluster/SiO2 interface is considered as the main mechanism of EL quenching for small size (up to 10 nm) REOX nanoclusters. It is suggested that the increase of the nanoclusters size results in disordering of the SiO2 matrix but in a decrease of local blocking for excitation of the luminescent centers.