Superconducting layers by gallium implantation and short-term annealing in semiconductors
Superconducting layers by gallium implantation and short-term annealing in semiconductors
Fiedler, J.; Heera, V.; Voelskow, M.; Mücklich, A.; Reuther, H.; Skorupa, W.; Gobsch, G.; Helm, M.
Abstract
Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO2/Si and SiO2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6 – 7 K which can be attributed to the metallic conduct-ing, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 17276) publication
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Acta Physica Polonica A 123(2013)5, 916-919
DOI: 10.12693/APhysPolA.123.916
Cited 2 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17276