Thermoelectric properties of porous silicon
Thermoelectric properties of porous silicon
de Boor, J.; Kim, D. S.; Ao, X.; Becker, M.; Hinsche, N. F.; Mertig, I.; Zahn, P.; Schmidt, V.
Abstract
We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.
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Applied Physics A 107(2012), 789-794
DOI: 10.1007/s00339-012-6879-5
Cited 54 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17333