Self-consistent isotopic comparative method used to determine dependence of secondary-yields on oxygen concentration in Si-O system up to 33%

Yields of B+,O+,Si+, B-, O-, and Si- versus oxygen concentration were determined in Si under Ar+ bombardment using the isotopic comparative method (ICM). Samples containing a near-uniform low concentration of 18O and a Gaussian-like profile of 16O with high concentration were fabricated by multi-energy ion implantation. ICM allows to determine the oxygen concentration profile by secondary-ion mass spectrometry. The ion yield can be measured as a function of the oxygen concentration up to 33 at%. Whatever the charge of the secondary ions, all relative ion yields are enhanced with increasing oxygen concentration. Very strong matrix effects due to oxygen are found for B+ (>100), whereas moderate or slight matrix effects are found for Si+ and O- (>10) and for Si-, B-, and O+ (<4). Relative ion yields of B+ and Si+ differ versus oxygen, whereas they are identical for B- and Si-. The relative ionization probability versus oxygen for Si+ agrees very well with the results of William´s group.