A Study of the Structural properties of GaN implanted by various rare-earth ions
A Study of the Structural properties of GaN implanted by various rare-earth ions
Mackova, A.; Malinský, P.; Sofer, Z.; Šimek, P.; Sedmidubský, D.; Mikulics, M.; Wilhelm, R. A.
Abstract
GaN layers with <0001> crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1×1015– 1×1016 cm−2. The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2012 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder density of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5x1015 cm-2 while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5x1015 cm-2 to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 17997) publication
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Nuclear Instruments and Methods in Physics Research B 307(2013), 446-451
DOI: 10.1016/j.nimb.2012.11.079
Cited 17 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17997