Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation
Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation
Putero, M.; Coulet, M.-V.; Ouled-Khachroum, T.; Muller, C.; Baehtz, C.; Raoux, S.
Abstract
The crystallization of stoichiometric GaSb thin films was studied by combined in situ synchrotron techniques and static laser testing. It is demonstrated that upon crystallization, GaSb thin films exhibit an unusual behaviour with increasing thickness and concomitant decreasing mass density while its electrical resistance drops as commonly observed in phase change materials. Furthermore, beyond GaSb amorphous-to-crystalline phase transition, an elemental segregation and a separate crystallization of a pure Sb phase is evidenced.
Keywords: PCRAM; XRD; XRR; synchrotron
Beteiligte Forschungsanlagen
- Rossendorf Beamline an der ESRF DOI: 10.1107/S1600577520014265
Verknüpfte Publikationen
- DOI: 10.1107/S1600577520014265 is cited by this (Id 19568) publication
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Applied Physics Letters 103(2013), 2319121-2319125
DOI: 10.1063/1.4842175
Cited 24 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-19568