Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The integration of III-V semiconductor material within silicon technology is crucial for performance of advanced electronic devices. This paper presents the investigations of microstructural and opto-electronic properties of GaAs quantum dots (QDs) formed in silicon by means of sequential ion implantation and flash lamp annealing (FLA). Formation of crystalline GaAs QDs with well-defined crystal orientation and conductivity type was confirmed by high resolution transmission electron microscopy and mu-Raman spectroscopy. The influence of the post implantation millisecond-range annealing on the evolution of the nanoparticles size, shape, crystallographic orientation and doping type of GaAs QDs is discussed.