Formation and photoluminescence of GaAs(1-x)N(x) dilute nitride achieved by N-implantation and flash lamp annealing

In this paper we present the fabrication of dilute nitride semiconductor GaAs(1-x)N(x) by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about ximp1=0.38% and ximp2=0.76%. The GaAs1-xNx layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs(1-x)N(x) samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for ximp1=0.38% and ximp2=0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.