Atomistic modeling of ion-beam and thermally induced processes in Si and Ge
Atomistic modeling of ion-beam and thermally induced processes in Si and Ge
Liedke, B.; Heinig, K.-H.; Schmidt, B.; Bulutay, C.; Böttger, R.; Posselt, M.; Bracht, H.
Abstract
The abstract was not needed
Keywords: Kinetic Monte-Carlo; atomistic simulation; silicon; germanium; molecular dynamics; phase separation; self organization
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21345) publication
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Sonstiger Vortrag
Seminar at the KTH Royal Institute of Technology - Reactor Physics, 12.11.2014, Stockholm, Sweden
Permalink: https://www.hzdr.de/publications/Publ-21345
