Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures
Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures
Bussone, G.; Dimakis, E.; Grifone, R.; Biermanns, A.; Tahraoui, A.; Carbone, D.; Geelhaar, L.; Schülli, T. U.; Pietsch, U.
Abstract
Polymers such as benzocyclobutene are commonly used as embedding materials for semiconductor nanostructures. During the curing process of the polymer up to 250 °C, a significant impact of strain can be induced on the embedded semiconductor material due to different thermal expansion coefficients. This strain has been revealed by X-ray diffraction in free-standing GaAs nanowires grown on a silicon substrate, embedded in a polymer matrix. It will be shown that this strain is released during the X-ray irradiation if additionally an external static electric field is applied.
Keywords: benzocyclobutene; polymer matrix; X-ray diffraction; embedded semiconductor nanostructures; GaAs nanowires; strain
-
Physica Status Solidi (RRL) 8(2014)12, 1007
DOI: 10.1002/pssr.201409346
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21499