Crystalline nanostructures on Ge surfaces induced by ion irradiation
Crystalline nanostructures on Ge surfaces induced by ion irradiation
Ou, X.; Facsko, S.
Abstract
Besides conventional low efficiency lithographic techniques broad ion beam irradiation is a simple and potentially mass productive technique to fabricate nanoscale patterns on various semiconductor surfaces. The main drawback of this method is that the irradiated semiconductor surfaces are amorphized, which strongly limits the potential application of these nanostructures in electronic and optoelectronic devices. In this work we report that high-quality crystalline nanostructure patterns are formed on Ge surfaces via Ar+ irradiation at elevated temperatures.
This pattern formation process resembles the pattern formation in homoepitaxy. Therefore, the process is discussed based on a "reverse epitaxy" mechanism.
Keywords: ion induced patterning; nanostructures; reverse epitaxy
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21730) publication
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Nuclear Instruments and Methods in Physics Research B 341(2014), 13-16
DOI: 10.1016/j.nimb.2013.11.043
Cited 9 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21730