Magnetization and X-ray absorption spectroscopy of Mn implanted Ge after flashlamp annealing
Magnetization and X-ray absorption spectroscopy of Mn implanted Ge after flashlamp annealing
Zhou, S.; Wang, Y.; Prucnal, S.; Jiang, Z.; Zhang, W.; Wu, C.; Weschke, E.; Skorupa, W.; Helm, M.
Abstract
Ge-based diluted magnetic semiconductors have drawn extensive attention over the past decades due to their potential to be applied in spintronic devices and to be integrated with the mainstream Si microelectronics as well. The hole-mediated effect in diluted magnetic semiconductors provides the possibility to realize the control of magnetic properties by the electrical control of free carriers. In this contribution, we will present the magnetic properties and X-ray absorption spectroscopy of Mn implanted Ge annealed by flashlamp.
Keywords: Magnetic thin films and nanostructures
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21972) publication
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Vortrag (Konferenzbeitrag)
IEEE International Conference on Magnetics 2015, 11.-15.05.2015, Beijing, China
Permalink: https://www.hzdr.de/publications/Publ-21972