Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network
Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network
Ilday, S.; Ilday, F. O.; Hübner, R.; Prosa, T. J.; Martin, I.; Nogay, G.; Kabacelik, I.; Mics, Z.; Bonn, M.; Turchinovich, D.; Toffoli, H.; Toffoli, D.; Friedrich, D.; Schmidt, B.; Heinig, K.-H.; Turan, R.
Abstract
Multiscale self-assembly is ubiquitous in nature but its deliberate use to synthesize multifunctional three-dimensional materials remains rare, partly due to the notoriously difficult problem of controlling topology from atomic to macroscopic scales to obtain intended material properties. Here, we propose a simple, modular, noncolloidal methodology that is based on exploiting universality in stochastic growth dynamics and driving the growth process under far-from-equilibrium conditions toward a preplanned structure. As proof of principle, we demonstrate a confined-butconnected solid structure, comprising an anisotropic random network of silicon quantum-dots that hierarchically self-assembles from the atomic to the microscopic scales. First, quantum-dots form to subsequently interconnect without inflating their diameters to form a random network, and this network then grows in a preferential direction to form undulated and branching nanowire-like structures. This specific topology simultaneously achieves two scale-dependent features, which were previously thought to be mutually exclusive: good electrical conduction on the microscale and a bandgap tunable over a range of energies on the nanoscale.
Keywords: Si; random network; hierarchical; multiscale; self-assembly; stochastic deposition
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23654) publication
- Nano Letters 16(2016), 1942-1948
Permalink: https://www.hzdr.de/publications/Publ-23654