Structural modification of Ga+ and N+ ion implanted ta-C films
Structural modification of Ga+ and N+ ion implanted ta-C films
Berova, M.; Sandulov, M.; Tsvetkova, T.; Karashanova, D.; Boettger, R.; Bischoff, L.
Abstract
Thin-film samples (d ~ 40 nm) of tetrahedral amorphous carbon (ta-C) deposited by filtered cathodic vacuum arc (FCVA) were implanted with Ga+ at ion energy E = 20 keV and ion fluences D = 3×10^14÷3×10^15 cm-2 and N+ with the same energy and a dose D = 3×1014 cm-2. The Ga+ ion beam induced a structural modification of the implanted material. This resulted in a considerable change of its structural properties, manifested as the formation of a new phase under non-equilibrium conditions, which could be accompanied by considerable changes in the ta-C films optical properties. The N+ implantation also resulted in a modification of the surface structure. These effects were explored using transmission (TEM) and scanning (SEM) electron microscopy.
Keywords: ta-C; ion implantation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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DOI: 10.1088/1742-6596/700/1/012035
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23669