Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
Eßer, F.; Winnerl, S.; Patanè, A.; Helm, M.; Schneider, H.
Abstract
We use time-resolved photoluminescence (PL) spectroscopy to study the recombination dynamics in Si-doped GaAsN semiconductor alloys with a nitrogen content up to 0.2%. The PL decay is predominantly monoexponential and exhibits a strong energy dispersion. We find ultra-short decay times on the high-energy side and long decay times on the low-energy side of the photoluminescence spectrum. This asymmetry can be explained by the existence of an additional non-radiative energy transfer channel and is consistent with previous studies on intrinsic GaAsN epilayers. However, the determined maximum decay times of GaAsN:Si are significantly reduced in comparison to undoped GaAsN. The determined excitonic mobility edge energy constantly decreases with increasing N content, in agreement with the two-level band anticrossing model.
Keywords: dilute nitride; mobility edge; recombination dynamics; time-resolved photoluminescence
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Applied Physics Letters 109(2016), 182113-1-182113-4
DOI: 10.1063/1.4966949
Cited 2 times in Scopus
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Permalink: https://www.hzdr.de/publications/Publ-23806