Doping by flash lamp annealing
Doping by flash lamp annealing
Prucnal, S.; Rebohle, L.; Skorupa, W.
Abstract
After a short introduction we will highlight processing issues (setup, comparison of annealing methods, relevant requirements for annealing due to doping, diffusion, activation, recrystallization, defect engineering), as well as doping issues for group IV-semiconductors (shallow junctions, hyperdoping, solar cells, superconductivity) and other semiconductors (manganese doping of GaAs for diluted magnetic semiconductors, doping for transparent conductive oxides). Mostly ion implantation serves as a source of dopants, but also diffusion from deposited layers is of growing importance.
Keywords: flash lamp annealing; pulsed light sintering; group IV-semiconductors; doping; diffusion; activation; recrystallization; defect engineering; diluted magnetic semiconductors; transparent conductive oxides
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24791) publication
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Materials Science in Semiconductor Processing 62(2017), 115-127
Online First (2016) DOI: 10.1016/j.mssp.2016.10.040
ISSN: 1369-8001
Cited 45 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-24791