Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Helium Ion Microscopy (HIM) is well known for its exceptional imaging and nanofabrication capabilities [1]⁠. After a brief introduction of this relatively young technique, I will focus on the localized creation of defects in metals and insulators.
Point defects created by the impinging He beam can be exploited to create sub–micron sized luminescent areas in appropriate materials (NaCl) [2]⁠. This combination of the nano sized beam of the HIM with ionoluminescence also allows to study fundamental processes of the defect formation and interaction [3]⁠. A technological relevant application of low fluence irradiation in the HIM is the formation of arbitrary shaped nano scale ferromagnetic areas in an otherwise para-magnetic matrix. In the particular case Fe60Al40 has been irradiated with fluences of only 6×1014cm-2 to create spin valve structures with a critical spacer length of only 20 nm [4]⁠.
Going beyond normally used ion doses allows to investigate defect agglomeration, blister formation and the subsequent surface restructuring [5]⁠. We present examples of materials modification at doses starting from 1×1017 cm−2 up to 1×1020 cm−2. Examples of surface structures formed under extreme ion fluencies at different temperatures will be presented for a wide range of materials including technological relevant materials for nuclear applications (Gold, Tungsten, Iron).

References:

[1] G. Hlawacek, V. Veligura, R. van Gastel, and B. Poelsema, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 32, 020801 (2014).
[2] V. Veligura, G. Hlawacek, U. Jahn, R. van Gastel, H. J. W. Zandvliet, and B. Poelsema, J. Appl. Phys. 115, 183502 (2014).
[3] V. Veligura, G. Hlawacek, R. van Gastel, H. J. W. Zandvliet, and B. Poelsema, J. Phys. Condens. Matter 26, 165401 (2014).
[4] F. Röder, G. Hlawacek, S. Wintz, R. Hübner, L. Bischoff, H. Lichte, K. Potzger, J. Lindner, J. Fassbender, and R. Bali, Sci. Rep. 5, 16786 (2015).
[5] V. Veligura, G. Hlawacek, R. P. Berkelaar, R. van Gastel, H. J. W. Zandvliet, and B. Poelsema, Beilstein J. Nanotechnol. 4, 453 (2013).