Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
Long, B.; Alessio Verni, G.; O’Connell, J.; Shayesteh, M.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; O’Connell, D.; Kuhn, K. J.; Clendenning, S. B.; Nagle, R.; Duffy, R.; Holmes, J. D.
Abstract
This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into the underlying substrate. Electrical and material characterisation was carried out, including an assessment of the Ge surface, carrier concentrations and crystal quality. Significantly, the intrinsic resistance of Ge nanowires with widths down to 30 nm, doped using MLD, was found to decrease by several orders of magnitude.
Keywords: Molecular layer doping; Nanowires; Semiconductors; Germanium; Conformal; Non-destructive
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Materials Science in Semiconductor Processing 62(2017), 196-200
DOI: 10.1016/j.mssp.2016.10.038
ISSN: 1369-8001
Cited 17 times in Scopus
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Permalink: https://www.hzdr.de/publications/Publ-26806