Doping of Ge via nonequilibrium processing
Doping of Ge via nonequilibrium processing
Prucnal, S.
Abstract
Here an overview of different doping techniques will be presented. Special attention will be focused on the use of ion implantation followed by flash-lamp (FLA) annealing for the fabrication of heavily doped Ge. In contrast to conventional annealing procedures, rear-side FLA leads to full recrystallization of Ge and dopant activation independently of pre-treatment. The maximum carrier concentration is well above 10^20 cm-3 for n-type and above 10^21 for p-type doping. The recrystallization mechanism and the dopant distribution during rear-side FLA are discussed in detail.
Keywords: ion implantation; flash lamp annealing; Ge; doping
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 26827) publication
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Eingeladener Vortrag (Konferenzbeitrag)
18th AGATA week and 2nd Position Sensitive Germanium Detectors and Application Workshop, 11.-15.09.2017, Milano, Italy
Permalink: https://www.hzdr.de/publications/Publ-26827