p-type co-doping effect of (Ga,Mn)P: Magnetic and magneto-transport properties
p-type co-doping effect of (Ga,Mn)P: Magnetic and magneto-transport properties
Xu, C.; Yuan, Y.; Wang, M.; Hentschel, H.; Böttger, R.; Helm, M.; Zhou, S.
Abstract
In this paper, we perform a comparison of magnetic and electrical properties between Mn-doped and (Mn, Zn) co-doped GaP dilute ferromagnetic semiconductors. Due to the shallow Zn impurity level (20–40 meV above the top of the III-V compounds valence band), the Zn co-doping leads to the increase of conductivity of (Ga,Mn)P, however both the Curie temperature and magnetization reduce, which is probably due to the suppression of active Mn substitution by Zn co-doping.
Keywords: Dilute ferromagnetic semiconductors; The Curie temperature; Magnetization; Co-doping; Magneto-transport
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 26895) publication
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Journal of Magnetism and Magnetic Materials 459(2018), 102-105
Online First (2017) DOI: 10.1016/j.jmmm.2017.11.124
Cited 5 times in Scopus
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