Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering
Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering
John, M.; Dalla, A.; Ibrahim, A. M.; Anwand, W.; Wagner, A.; Böttger, R.; Krause-Rehberg, R.
Abstract
The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.
Keywords: positron annihilation spectroscopy ion-beam sputtering
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
- P-ELBE
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 27328) publication
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Nuclear Instruments and Methods in Physics Research B 423(2018), 62-66
DOI: 10.1016/j.nimb.2018.03.017
Cited 2 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-27328