Irradiation effects on the structural and optical properties of single crystal β-Ga2O3
Irradiation effects on the structural and optical properties of single crystal β-Ga2O3
Liu, C.; Berencén, Y.; Yang, J.; Wei, Y.; Wang, M.; Yuan, Y.; Xu, C.; Xie, Y.; Li, X.; Zhou, S.
Abstract
In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the photoluminescence quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviours by varying the oxygen irradiation fluence.
Keywords: β-Ga2O3; ion irradiation; photoluminescence; radiation defect
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Semiconductor Science and Technology 33(2018)9, 095022
DOI: 10.1088/1361-6641/aad8d1
Cited 34 times in Scopus
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