Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting
Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting
Xu, C.; Wang, M.; Zhang, X.; Yuan, Y.; Zhou, S.
Abstract
In the present work, we show the preparation of (In,Ga,Mn)As films with different Ga concentration by Mn ion implantation and pulsed laser melting. All films are confirmed to be well recrystallized by Rutherford backscattering spectrometry/channeling and to be ferromagnetic by magnetometry measurements, respectively. Their Curie temperatures depend on the Ga concentration. Our results show the perspective of ion implantation in the preparation of different III-Mn-V quaternary alloys as new members of diluted ferromagnetic semiconductors.
Keywords: Thin film; Ion implantation; Pulsed laser melting; III-V compounds
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 29152) publication
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Nuclear Instruments and Methods in Physics Research B 442(2019), 31-35
DOI: 10.1016/j.nimb.2018.12.049
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