Effect of irradiation on defect coherence properties in silicon carbide

Astakhov, G. V.

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Effect of irradiation on defect coherence properties in silicon carbide

Astakhov, G. V.

Abstract

We have thoroughly investigated the irradiation impact on the room-temperature spin coherence properties of silicon vacancies in SiC. We have measured the spin-lattice relaxation time and the spin coherence time depending on the irradiation particle (electron, neutron and proton), irradiation fluence and irradiation energy.

Beteiligte Forschungsanlagen

Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58

Verknüpfte Publikationen

DOI: 10.17815/jlsrf-2-58 is cited by this (Id 29577) publication

Eingeladener Vortrag (Konferenzbeitrag)
Ion Beam for future Technologies 2019, 01.-03.04.2019, Dubrovnik, Croatia

Permalink: https://www.hzdr.de/publications/Publ-29577