Evolution of donor-vacancy clusters in Ge, GeSn and SiGeSn during ms-range FLA monitored by positron annihilation spectroscopy
Evolution of donor-vacancy clusters in Ge, GeSn and SiGeSn during ms-range FLA monitored by positron annihilation spectroscopy
Prucnal, S.; Liedke, M. O.; Wang, X.; Posselt, M.; Knoch, J.; Berencen, Y.; Rebohle, L.; Napolitani, E.; Frigerio, J.; Ballabio, A.; Isella, G.; Hübner, R.; Wagner, A.; Zuk, J.; Turek, M.; Helm, M.; Zhou, S.
Abstract
The n-type doping of Ge and Ge-based alloys is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ≤ 4) that deactivate the donors. This work clearly demonstrates that the dissolution of the DnV clusters in a heavily n-doped Ge, GeSn and SiGeSn layers can be achieved by millisecond-flash lamp annealing. This DnV cluster dissolution results in a considerable increase of the electrical activation together with a suppression of donor diffusion. Using electrical measurements and positron annihilation lifetime spectroscopy, combined with theoretical calculations, it is possible to address, understand and solve the fundamental problem of achieving ultra-high doping level in Ge, that has hindered so far the full integration of Ge and Ge-based alloys with complementary-metal-oxide-semiconductor technology.
Keywords: Ge; GeSn alloy; defects; flash lamp annealing; ion implantation
Beteiligte Forschungsanlagen
- Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 30251) publication
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 30251) publication
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Vortrag (Konferenzbeitrag)
EMRS Fall Meeting 2019, 16.-19.09.2019, Warsaw, Poland
Permalink: https://www.hzdr.de/publications/Publ-30251