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Cavity enhanced third-harmonic generation in Si:B pumped with intense terahertz pulses

Meng, F.; Thomson, M. D.; Klug, B.; Ul-Islam, Q.; Pashkin, O.; Schneider, H.; Roskos, H. G.

Abstract

We report third-harmonic generation (THG) of terahertz free-electron laser (FEL) pulses in Si:B at cryogenic temperatures. The physical mechanism of THG is attributed to the free-carrier χ(3) nonlinearity due to the non-parabolicity of the valence band. The value of χ(3) increases as a function of the carrier density, which are generated via impact ionization of the boron dopants under irradiation by the FEL pulses. By positioning the Si:B in a one-dimensional photonic crystal (1D PC) cavity, the measured THG intensity increases by a factor of about 200.

Keywords: Cavity resonators; Impact ionization; Semiconductor device measurement; Power harmonic filters; Silicon; Harmonic analysis

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Verknüpfte Publikationen

  • Open Access Logo Beitrag zu Proceedings
    44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 01.-06.09.2019, Paris, France
    2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), IEEE Xplore
    DOI: 10.1109/IRMMW-THz.2019.8874582

Permalink: https://www.hzdr.de/publications/Publ-30294