Precipitation, ripening and chemical effects durin annealing of Ge+ implanted Si02 layers
Precipitation, ripening and chemical effects durin annealing of Ge+ implanted Si02 layers
Schmidt, B.; Heinig, K.-H.; Markwitz, A.; Grötzschel, R.; Strobel, M.; Oswald, S.
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Vortrag (Konferenzbeitrag)
11 th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-3055