Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Hollenbach, M.; Berencen, Y.; Kentsch, U.; Helm, M.; Astakhov, G.
Abstract
We create and isolate single-photon emitters with a high brightness approaching 10⁵ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the ¹²C and ²⁸Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on the same SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
Keywords: Signe photon source; telecommunication window; silicon photonics; quantum communication; color centers
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 31352) publication
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Optics Express 28(2020), 26111-26121
DOI: 10.1364/OE.397377
Cited 45 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-31352