Behavior of implanted Xe and Kr in nanodiamond and thin graphene stacks: experiment and modeling

Implantation and subsequent behaviour of heavy noble gases (Ar, Kr, Xe) in few-layer graphene sheets and in nanodiamonds
is studied both using computational methods and experimentally using X-ray absorption spectroscopy. For the first time the
Xe-vacancy (Xe-V) defect is experimentally confirmed as a main site for Xe in the diamond. It is shown that noble gases in
thin graphene stacks distort the layers, forming bulges. The energy of an ion placed in between flat graphene sheets is
notably lower than in domains with high curvature. However, if the ion is trapped in the curved domain, considerable
additional energy is required to displace it.