Increased dephasing length in heavily doped GaAs
Increased dephasing length in heavily doped GaAs
Duan, J.; Wang, C.; Vines, L.; Rebohle, L.; Helm, M.; Zeng, Y.-J.; Zhou, S.; Prucnal, S.
Abstract
Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 oC is employed to obtain metallic n++-GaAs layers. The electron concentration in annealed GaAs is as high as 5×1019 cm-3, which is several times higher than the doping level achievable by alternative methods. We found that heavily doped n++-GaAs exhibits positive magnetoconductance in the temperature range of 3-80 K, which is attributed to the magnetic field suppressed weak localization. By fitting the magnetoconductance results with Hikami-Larkin-Nagaoka model, it is found that the phase coherence length increases with increasing carrier concentration at low temperature and is as large as 540 nm at 3 K. The temperature dependence of the phase coherence length follows〖 l〗_∅∝T^η (η~0.3), indicating defect-related scattering as the dominant dephasing mechanism. In addition, the high doping level in n-type GaAs provides the possibility to use GaAs as a plasmonic material for chemical sensors operating in the infrared range.
Keywords: ion implantation; heavily doped GaAs; phase coherence length; sub-second annealing; plasmonic
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 33012) publication
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New Journal of Physics 23(2021), 083034
DOI: 10.1088/1367-2630/ac1a98
Cited 2 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-33012