Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Silicon carbide (SiC) is a suitable candidate for Micro- and Nanoelectromechanical systems due to its superior mechanical properties. We would like to use it as a quantum sensor to sense small magnetic fields. It can be achieved by coupling a spin associated silicon vacancy (V_Si) in 4H-SiC with a mechanical mode of a resonator. Spin-mechanical resonance is observed when resonance frequency from V_Si matches resonance frequency of a mechanical mode.
In the initial experiments, we focus on the material modification by helium (He+) ion broad beam implantation on a strained resonator based on 3C-SiC implanted with high fluence of (1*10^14 /cm^2) and low fluence (1*10^12 /cm^2) at 14 keV. The change in resonance frequency and quality factors as a function of fluence is studied. We also show the effect on stress and higher modes of the nanomechanical resonators.