Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile

Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile

Kögler, R.; Skorupa, W.; Yankov, R. A.; Posselt, M.; Danilin, A. B.

• Beitrag zu fremdem Sammelwerk
  Proc. 1998 Int. Conf. on Ion Implantation Technology, Kyoto, Japan, June 22-26, 1998, eds.: J. Matsuo, G. Takaoka, Y. Yamada; IEEE, Piscataway, USA, 1998, IEEE Publications 98EX144, p. 1117

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