Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing


Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing

Rizzato, R.; Schalk, M.; Mohr, S.; Hermann, J. C.; Leibold, J. P.; Bruckmaier, F.; Salvitti, G.; Ji, P.; Astakhov, G.; Kentsch, U.; Helm, M.; Stier, A. V.; Finley, J. J.; Bucher, D. B.

Abstract

Negatively-charged boron vacancy centers hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors of temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.

Keywords: Quantum technologies; 2D materials; Spintronics; Defects

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