Al-delta-doped ZnO films made by atomic layer deposition and flash-lamp annealing for low-emissivity coating
Al-delta-doped ZnO films made by atomic layer deposition and flash-lamp annealing for low-emissivity coating
Zhang, G.; Steuer, O.; Li, R.; Cheng, Y.; Hübner, R.; Helm, M.; Zhou, S.; Liu, Y.; Prucnal, S.
Abstract
In this work, we have investigated and optimized the Al-delta-doped ZnO (δ -AZO) superlattices for mid-infrared applications. Thin films of δ -AZO are fabricated by atomic layer deposition (ALD) followed by millisecond-range (ms-range) flash-lamp annealing (FLA). During the FLA process, the superlattice structure is preserved and Al is electrically activated. The highest carrier concentration and lowest resistivity estimated from Hall-effect measurements are 2.7 × 1021 cm−3 and 8.8 × 10-4 Ωcm, respectively, for the δ -AZO superlattice with an Al:Zn ratio of 1:20. Moreover, glass substrates coated with the developed δ -AZO superlattice show a reflectance above 60 % in the near- and mid-infrared spectral range, while the transmittance in the visible range maintains above 80 %. The presented δ -AZO superlattice is a good alternative material to replace indium tin oxide films for cost-efficient low-emissivity glazing.
Keywords: Al-doped ZnO; Delta-doping; Flash-lamp Annealing; Low-Emissivity coating
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 38568) publication
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Applied Surface Science 648(2024), 159046
Online First (2023) DOI: 10.1016/j.apsusc.2023.159046
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-38568