Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties
Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties
Gebel, T.
Abstract
The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.
Keywords: nanocluster; electroluminescence; photoluminescence; non-volatile memory; charge trapping; retention; endurance; CV; IV; EL; PL; RBS; TEM; defect luminescence; silicon dioxide; SiO2; Fowler-Nordheim
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Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-350 Juli 2002
ISSN: 1437-322X
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