Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Annealing effects on silicon oxynitride layer synthesized by N plasma immersion ion implantation

Ueda, M.; Reuther, H.; Beloto, A. F.; Kuranaga, C.; Abramof, E.

• Vortrag (Konferenzbeitrag)
  20th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology, Campos do Jordao, Brasilien, 25 - 29.9.2003
• IEEE Transactions on Plasma Science 34(2006)4, 1080-1083

Permalink: https://www.hzdr.de/publications/Publ-5912