Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon
Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon
Kögler, R.; Peeva, A.; Mücklich, A.; Eichhorn, F.; Skorupa, W.
Abstract
The defect structure of Ge-implanted and annealed silicon was investigated. Based on the observation of both, interstitial- and vacancy-type defects, a stacked structure of layers of vacancy and interstitial clusters was detected. These defects form a substructure within the basic dual structure consisting of a vacancy-dominated and an interstitial-dominated region. The appearance of cavities (vacancy clusters) in the interstitial-dominated region indicates significant vacancyvacancy clustering beside the vacancyinterstitial recombination. Clustering of vacancies and interstitials prevents the vacancyinterstitial recombination. The observed defect structure is in contrast to the widely accepted +1 model which predicts the complete recombination of ion-generated vacancies and interstitials. The limits of the +1 model are discussed.
Keywords: Ion implantation; defects; +1 model; Si
- Applied Physics Letters 88(2006)10, 1918
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