Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001)multilayer thin films
Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001)multilayer thin films
Höglund, C.; Beckers, M.; Schell, N.; von Borany, J.; Birch, J.; Hultman, L.
Abstract
The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and alpha-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3 (0001) at 200°C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400°C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500°C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.
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Applied Physics Letters 90(2007), 174106
DOI: 10.1063/1.2731520
Cited 40 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-9709