E1/E2 an Z1/Z2 deep level defects in n-type 6H silicon carbide induced by electron irradiation and He implantation

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Ling, C. C.; Cheng, X. D.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.

Abstract

E1/E2 an Z1/Z2 deep level defects in n-type 6H silicon carbide induced by electron irradiation and He implantation are studied.

Keywords: deep levels; SiC; electron irradiation; He implantation

Vortrag (Konferenzbeitrag)
27th International Conference on the Physics of Semiconductors (ICPS-27), 26.-30.07.2004, Flagstaff, USA

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